Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof

ABSTRACT

Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of co-pending U.S. application Ser. No.13/828,810, filed Mar. 14, 2013.

TECHNICAL FIELD

Embodiments of the present invention relate generally to microelectronicdevices and, more particularly, to Microelectromechanical System(“MEMS”) devices having through substrate vias, as well as to methodsfor the fabrication of such MEMS devices.

BACKGROUND

Microelectromechanical Systems (“MEMS”) devices are employed asactuators and sensors in a wide variety of applications.Capacitive-sensing MEMS devices, for example, are now commonly employedin many different electronic devices to sense acceleration, vibration,device orientation, and other inertia-related parameters. Such MEMSdevices function by sensing changes in capacitance between electrodes ina transducer structure. The transducer structure may include, forexample, a number of stationary electrodes or “fingers” interposed withand spaced apart from a number of movable electrodes or “fingers” in acomb-type arrangement. The movable electrodes are rigidly joined to alarger movable structure commonly referred to as a “proof mass,” whichis resiliently suspended over an underlying substrate. During operationof the MEMS device in an example, a voltage differential is appliedacross the stationary or movable electrodes. As the proof structuremoves in response to acceleration of the MEMS device, the movableelectrodes are displaced with respect to the fixed electrodes and thecapacitances between the electrodes vary accordingly. By monitoringthese capacitances, the acceleration or other movement of the MEMSdevice can be determined.

Interconnect lines route electrical signals from the electrodes of thetransducer structure to bond pads or other contacts located on theexterior of the MEMS device. Depending upon the particular manner inwhich the MEMS device is fabricated, the bond pads may be formed onlaterally-projecting ledges of the MEMS device referred to as “bond padshelves.” Such an arrangement is often employed in implementationswherein the MEMS device includes a cover portion or cap, which sealinglyencloses the transducer structure to prevent environmental contaminationthereof. In one common package architecture, the bond pads of the MEMSdevice are electrically connected to a MEMS-monitoring circuit, such asan application specific integrated circuit, packaged with the MEMSdevice. In implementations wherein the bond pads are formed on bond padshelves and, therefore, disposed at an elevation between the upper andlower surfaces of the MEMS device, wire bonding is typically required toform the desired electrical connections between MEMS bond pads and theMEMS-monitoring circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

At least one example of the present invention will hereinafter bedescribed in conjunction with the following figures, wherein likenumerals denote like elements, and:

FIG. 1 is a simplified cross-sectional view of a MEMS device illustratedin accordance with the teachings of prior art and including alaterally-projecting bond pad shelf supporting a number of bond pads,which may be wire bonded to a neighboring integrated circuit (notshown);

FIGS. 2-17 are simplified cross-sectional view of a MEMS devices shownat various stages of manufacture and including one or moreThrough-Substrate Vias (“TSVs”) providing electrical connection to oneor more bond pads formed on the bottom surface of the MEMS device, asillustrated in accordance with an exemplary and non-limiting embodimentof the present invention; and

FIGS. 18 and 19 are simplified cross-sectional view of thepartially-completed MEMS device of FIGS. 4 and 16, respectively, butwith a larger area of the MEMS device shown to illustrate one manner inwhich photolithography alignment features can conveniently be formed inparallel with one or more TSVs in preferred implementations of the MEMSfabrication method.

For simplicity and clarity of illustration, the drawing figuresillustrate the general manner of construction and may omit depiction,descriptions, and details of well-known features and techniques to avoidunnecessarily obscuring the exemplary and non-limiting embodiments ofthe invention described in the subsequent Detailed Description. Itshould further be understood that features or elements appearing in theaccompanying figures are not necessarily drawn to scale unless otherwisestated. For example, the dimensions of certain elements or regions inthe figures may be exaggerated relative to other elements or regions toimprove understanding of embodiments of the invention.

DETAILED DESCRIPTION

The following Detailed Description is merely exemplary in nature and isnot intended to limit the invention or the application and uses of theinvention. Any implementation described herein as exemplary is notnecessarily to be construed as preferred or advantageous over otherimplementations. Furthermore, there is no intention to be bound by anytheory presented in the preceding Background or the following DetailedDescription.

Terms such as “first,” “second,” “third,” “fourth,” and the like, ifappearing in the description and the subsequent claims, may be utilizedto distinguish between similar elements and are not necessarily used toindicate a particular sequential or chronological order. Such terms maythus be used interchangeably and that embodiments of the invention arecapable of operation in sequences other than those illustrated orotherwise described herein. Furthermore, terms such as “comprise,”“include,” “have,” and the like are intended to cover non-exclusiveinclusions, such that a process, method, article, or apparatus thatcomprises a list of elements is not necessarily limited to thoseelements, but may include other elements not expressly listed orinherent to such process, method, article, or apparatus. The term“coupled,” as appearing herein, is defined as directly or indirectlyconnected in an electrical or non-electrical manner. Furthermore, theterms “substantial” and “substantially” are utilized to indicate that aparticular feature or condition is sufficient to accomplish a statedpurpose in a practical manner and that minor imperfections orvariations, if any, are not significant for the stated purpose. Finally,as still further appearing herein, terms such as “over,” “under,” “on,”and the like are utilized to indicate relative position between twostructural elements or layers and not necessarily to denote physicalcontact between structural elements or layers. Thus, a structure orlayer may be described as fabricated “over” or “on” a substrate withoutindicating that the structure or layer necessarily contacts thesubstrate due to, for example, presence of one or more interveninglayers.

FIG. 1 is a simplified cross-sectional view of a MEMS device 20 and,specifically, a capacitive-sensing MEMS accelerometer illustrated inaccordance with the teachings of prior art. MEMS device 20 includes anelectrically-conductive transducer layer 22 overlying a MEMS substrate24. Transducer layer 22 and MEMS substrate 24 may initially be includedin two separate workpieces or wafers, which are bonded together duringfabrication of MEMS device 20. Such a fabrication process can beutilized to produce high aspect ratio transducer structures includedwithin MEMS devices and may consequently be referred to as a “HighAspect Ratio MEMS” fabrication method or, more simply, as a “HARMEMS”fabrication method. The pieces or portions of these two wafers includedin the completed MEMS device 20 (shown in FIG. 1) are thus referred toas a “transducer wafer portion 28” and a “substrate wafer portion 30”herein. In one embodiment, the transducer wafer and substrate wafer aresilicon wafers, which are processed in bulk to produce MEMS device 20along with a number of similar MEMS devices. The other,simultaneously-produced MEMS devices are separated from MEMS device 20by singulation during production to yield the completed MEMS device 20shown in FIG. 1.

MEMS transducer layer 22 is patterned to define a primary transducerstructure 36 including a number of anchor regions 38 (one of which isshown in FIG. 1) fixedly joined to the underlying substrate 24. Anchorregions 38 are resiliently joined to a relatively large movable bodycommonly referred to as a “proof mass” (hidden from view in FIG. 1) by anumber of spring members 40, which are compliant in the axis or axesalong which MEMS device 20 senses acceleration. The proof mass iseffectively suspended above substrate 24 and can move, as permitted bydeflection of spring members 40, relative to anchor regions 38 and theother stationary structures of MEMS device 20 in response toacceleration thereof. The electrodes of transducer structure 36 areelectrically coupled to a row of externally-accessible bond pads 42 (oneof which is shown in FIG. 1), which enable interconnection of the senseelectrodes of MEMS device 20 with an integrated circuit or otherexternal electronic device. As indicated in FIG. 1, bond pads 42 aredisposed on a bond pad shelf 44, which may be defined by alaterally-projecting side portion of a MEMS cap 32 affixed overtransducer layer 22 utilizing an electrically-conducive bonding material34. An intervening dielectric layer 48 provides electrical isolationbetween bond pads 42 and MEMS cap 32, which may be fabricated fromsilicon or another electrically-conductive material.

MEMS device 20 is fabricated to include a number ofelectrically-isolated interconnect lines, which electrically couple thesense electrodes of primary transducer structure 36 to bond pads 42. Forpurposes of illustration, one such interconnect line 50 is schematicallyshown in FIG. 1 as electrically coupling anchor region 38 of primarytransducer structure 36 to the illustrated bond pad 42. As shown in FIG.1, the MEMS device 20 may include two such interconnect layers: (i) afirst patterned interconnect layer 52, which overlies substrate 24 andunderlies transducer layer 22; and (ii) a second patterned interconnectlayer 54, which overlies transducer layer 22 and underlies MEMS cap 32.Interconnect layers 52 and 54 are lithographically patterned to createvoids or air gaps 62 electrically isolating the interconnect lines.Interconnect layers 52 and 54 are electrically-isolated from the otherelectrically-conductive layers of MEMS device 20 (e.g., MEMS substrate24, transducer layer 22, and MEMS cap 32) by a number of interposeddielectric layers. In FIG. 1, MEMS device 20 includes three suchdielectric layers: (i) a first dielectric layer 56 formed between MEMSsubstrate 24 and interconnect layer 52; (ii) a second dielectric layer58 formed between interconnect layer 52 and transducer layer 22; and(iii) a third dielectric layer 60 formed between interconnect layer 54and MEMS cap 32. The portions of the interconnect lines extendingupwardly or downwardly (along the Z-axis in FIG. 1) through theelectrically-conductive regions of MEMS device 20 are likewiseelectrically isolated by air gaps or columns of dielectric material (notshown in FIG. 1), as conventionally known.

In embodiments wherein MEMS device 20 senses acceleration along theZ-axis, voids 64 may also be created in a central portion of dielectriclayer 58 to accommodate deflection of the proof mass of primarytransducer structure 36 in a downward direction. Similarly, a verticalstandoff may be provided by the thickness of bonding material 34 toaccommodate deflection of the proof mass of primary transducer structure36 in an upward direction. Also, in embodiments wherein MEMS device 20senses acceleration along the Z-axis, interconnect layers 52 and 54 mayalso be patterned to define additional sense electrodes for monitoringchanges in capacitance along the Z-axis. If electrically-conductiveinterconnect layer 52 and/or interconnect layer 54 is patterned toinclude one or more Z-sensing electrodes, such electrodes may likewisebe electrically coupled to one or more bond pads provided on theexterior of MEMS device 20 by electrically-isolated interconnect linesof the type described above.

Bond pad shelf 44 is formed by a laterally-projecting or overhangingside portion of MEMS cap 32, which extends beyond a sidewall 66 of MEMSdevice 20 (defined by vertical edges of transducer wafer portion 28 andsubstrate wafer portion 30) in a lateral direction. Bond pad shelf 44and the bond pads 42 supported thereby are thus located between theuppermost surface 68 of MEMS device 20 (the topside of MEMS cap 32) andthe lowermost surface 70 of device 20 (the underside of MEMS substrate24). A lateral clearance C₁ is also typically provided between bond pads42 and the adjacent sidewall of MEMS cap 32 as bond pads 42 may beexposed during fabrication utilizing a partial saw cut to remove area 72from non-active side portions of transducer wafer portion 28 andsubstrate wafer portion 30. While such a structural arrangement providesa workable device, the inclusion of bond pad shelf 44 increases theoverall die size of MEMS device 20. Additionally, due to the relativelylarge step height between bond pad shelf 44 and the lower surface 70 ofMEMS substrate 24, MEMS device 20 is generally not amenable to ChipScale Packaging (CSP) processes, such as Redistributed Chip Packaging(RCP) processes. As a result, wire bonding is typically required to formthe desired electrical connections between MEMS bond pads 42 and theintegrated circuit utilized to drive and monitor MEMS device 20 (notsown in FIG. 1).

To bring about favorable reductions in die size and manufacturing costs,the following described embodiments of a method for fabricating anexemplary MEMS device wherein the need for a bond pad shelf iseliminated; although it will be appreciated that a bond pad shelf may ormay not be included in the MEMS devices produced pursuant to thebelow-described method. Elimination of the need for a bond pad shelf isachieved, at least in part, through the formation ofThrough-Substrate-Vias (“TSVs”), which route electrical signals and/orvoltages between the sense electrodes of the MEMS device and bond padsor other electrical conductors formed on the backside of the MEMSsubstrate. While other methods of fabricating MEMS devices with TSVs maybe known, the MEMS fabrication methods described herein provide certainadvantages over other such currently-known fabrication methods. Forexample, the MEMS fabrication method described herein can be implementedas a modified HARMEMS fabrication method wherein the substrate andtransducer wafers are consolidated or combined, possibly in conjunctionwith a cap wafer, during fabrication of the MEMS device. Notably, insuch cases, and in contrast to other known HARMEMS fabrication methods,the need for metal routing on the MEMS cap can be eliminated therebyenabling the usage of so-called “dumb caps” lacking such interconnectfeatures and utilized solely for hermetic sealing purposes; although thepossibility that the MEMS devices can include metal routing or otherinterconnect features formed on a MEMS cap in addition to one or moreTSVs is by no means precluded. Embodiments of the below-described methodalso facilitate the formation of photolithographical alignment featureson the backside of the ground or thinned MEMS substrate in conjunctionwith formation of the TSVs. Additional benefits of the below-describedMEMS manufacturing methods will also become apparent in the course ofthe subsequent description.

Embodiments of the below-described fabrication method are described inconjunction with the fabrication of an exemplary MEMS device 80, whichis shown at various stages of completion in FIGS. 2-17. The followingexample notwithstanding, it should be understood that embodiments of thefabrication method described herein can be utilized to produce a varietyof different types of MEMS devices, which may differ form MEMS device 80in structure and function. Furthermore, while MEMS device 80 iswell-suited for usage as an accelerometer and may consequently bedescribed below as such, it is emphasized that embodiments of the MEMSdevices described herein are by no means limited to implementation asaccelerometers. Rather, the fabrication methods described herein can beutilized to produce MEMS actuators with appropriate design modificationsto produce a capacitive actuation structure, as well as other types ofMEMS sensors, such as gyroscopes, magnetometers, pressure sensors, andthe like. It will further be appreciated that the fabrication stepsdescribed below in conjunction with FIGS. 2-17 can be performed inalternative orders, that certain steps may be omitted, and thatadditional steps may be performed in alternative embodiments.Description of structures and processes known within the MEMS device andsemiconductor industries may be limited or omitted entirely withoutproviding the well-known process details.

FIGS. 2-17 are simplified cross-sectional view of a MEMS device 80 shownat various stages of manufacture, as produced in accordance with anexemplary embodiment of the MEMS manufacturing method. Referringinitially to FIG. 2, the exemplary manufacturing method commences withthe provision of a MEMS substrate 82 having an upper surface 84 and alower surface 86. MEMS substrate 82 may be comprised of at least onesemiconductor material and is preferably comprised of silicon. Forexample, substrate 82 may be a single crystal silicon substrate producedby singulation of a bulk silicon wafer, as performed at a later juncturein the fabrication process; e.g., in one common volume manufacturingtechnique, multiple MEMS devices are simultaneously fabricated inparallel on a bulk silicon substrate, which is later singulated toproduce substrate 82 and a number of like substrates included withinother MEMS devices. However, for ease of illustration and description,the fabrication method depicted in conjunction with FIGS. 2-17 depictsonly simplified portions of a single MEMS device. The foregoing examplenotwithstanding, MEMS substrate 82 may comprise any substrate on whichMEMS device 80 can be fabricated including, for example, multi-layersubstrates (e.g., Silicon-On-Insulator substrates), substrates composedof non-silicon semiconductor materials, and substrates composed ofmaterials other than semiconductor materials.

As indicated in FIG. 2, one or more via openings 88 are etched into orotherwise formed in MEMS substrate 82. Each via opening 88 extends apredetermined depth D₁ into MEMS substrate 82 from the principal uppersurface 84 thereof, but does not extend to underside 86 of MEMSsubstrate 82 to fully penetrate substrate 82. Depending upon theirparticular dimensions, via openings 88 may be produced utilizing anymaterial removal process suitable for forming high aspect ratio featuresincluding, for example, Deep Reactive Ion Etch (DRIE) processes. Theparticular dimensions of via openings 88 will vary amongst embodiments.However, by way of example, via openings 88 may be formed to each have adepth of about 150 to about 350 μm, as measured from upper surface 84 ofMEMS substrate 82; a lateral width (taken along the plane of the page inFIG. 2 or along the X-axis in FIG. 16) between about 5 and about 100 μmand, more preferably, between about 10 and about 50 μm; and a length(taken into the page in FIG. 2 or along the Y-axis in FIG. 16) betweenabout 5 and about 100 μm and, more preferably, between about 10 andabout 50 μm.

Turning to FIG. 3, a dielectric layer 90 may next be formed over theupper surface of MEMS substrate 82. Dielectric layer 90 is also formedover the inner surfaces of substrate 82 defining via openings 88 toproduce a number of TSV isolation liners 91 (one of which is shown inFIG. 3). Dielectric layer 90 and TSV isolation liners 91 may beintegrally formed as an oxide (collectively referred to herein as a“substrate oxide layer 90, 91”) thermally grown to a thickness of, forexample, about 2 μm. In embodiments wherein MEMS substrate 82 iscomposed of silicon, substrate oxide layer 90, 91 will grow as siliconoxide over the exposed surfaces of substrate 82, including the innersurfaces of substrate 82 defining the sidewalls and floor of each viaopening 88. Alternatively, substrate oxide layer 90, 91 can be depositedutilizing, for example, a chemical vapor deposition (“CVD”) process.

After formation of substrate oxide layer 90, 91, a layer ofelectrically-conductive material 92 is deposited over the upper surfaceof dielectric layer 90, over the upper surfaces of TSV isolation lines91, and into via opening 88. As shown in FIG. 4, such a depositionprocess results in the filling of via opening 88 with theelectrically-conductive material to yield a filled via 94. Via 94 andthe other non-illustrated vias are buried at this juncture in themanufacturing process; that is, the lower terminal end of via 94 has notyet been exposed through the bottom surface of MEMS substrate 82 toproduce a TSV extending entirely through substrate 82.Electrically-conductive layer 92 may be formed by deposition ofpolycrystalline silicon utilizing a CVD or physical vapor deposition(“PVD”) process. After deposition of electrically-conductive layer 92, aChemical Mechanical Planarization (“CMP”) process may be utilized topolish back to dielectric layer 90 and thereby remove the portion oflayer 92 overlying the upper surface of MEMS substrate 82, while leavingvia 94 and its surrounding liner 91 intact. The resultant structure isshown in FIG. 5.

The term “filled,” as appearing herein, denotes that a sufficientquantity of electrically-conductive material has been introduced into acontact or via opening to provide an electrically-conductive paththerethrough. Thus, in some embodiments, via openings 88 formed in MEMSsubstrate 82 (shown in FIG. 4) may be partially filled or plated with anelectrically-conductive material, such as polysilicon or a metal. Forexample, in certain embodiments, via openings 88 may be plated with ahigh temperature metal, such as tungsten, able to tolerate the elevatedtemperatures that may occur during thermal processing of MEMS device 80,as described below. The foregoing notwithstanding, it is preferred thatvia openings 88 are filled with an electrically-conductive material intheir substantial entirety and, more preferably, completely filled withpolycrystalline silicon to produce vias 94.

With reference FIG. 6, a layer of electrically-conductive material 96next be deposited over the upper surface of dielectric layer 90 andfilled via 94 (and the other non-illustrated vias formed in MEMSsubstrate 82). As electrically-conductive layer 96 is later patterned todefine one or more interconnect lines, at least in some embodiments,layer 96 is referred to as “interconnect layer 96” hereafter. In oneembodiment, interconnect layer 96 is composed of polycrystalline silicondeposited utilizing a CVD or PVD process. In another embodiment,interconnect layer 96 is composed of a deposited metal. Interconnectlayer 96 may be deposited to thickness of about 0.3 μm in an embodiment,although layer 96 may be thicker or thinner in other embodiments.Interconnect layer 96 is illustrated in FIG. 7 after lithographicalpatterning has been carried-out to form a number of openings 98 thereinand thereby define one or more interconnect lines within interconnectlayer 96. Openings 98 may be left unfilled or may instead be filled witha sacrificial material during fabrication that is subsequently removedin the below-described manner. In either case, openings 98 define airgaps or voids that electrical isolate neighboring interconnect linesdefined within patterned interconnect layer 96. In alternativeembodiments, openings 98 may be filled with a dielectric material, whichis not removed during subsequent fabrication steps; however, in such acase, the dielectric-filled openings still provide the requisiteelectrical isolation between neighboring interconnect lines of layer 96.Notably, in the illustrated embodiment, interconnect layer 96 ispatterned to include at least one interconnect line 100 (partially shownin FIG. 7) in ohmic contact with filled via 94. In embodiments whereinMEMS device 80 is designed to sense acceleration along the Z-axis,electrically-conductive interconnect layer 96 may also be patterned todefine one or more sense electrodes, which underlie the proof mass ofsubsequently-formed transducer structure 118 (described below).

A sacrificial dielectric material is next deposited over the patternedinterconnect layer 96 to fill openings 98 and yield a sacrificialdielectric layer 102 overlying interconnect layer 96, as shown in FIG.8. Sacrificial dielectric layer 102 is conveniently formed from adeposited oxide; e.g., in one embodiment, dielectric layer 102 is asilicon oxide deposited utilizing a low temperature Plasma-Enhanced CVDor Low Pressure CVD with a silane (SiH₄) or tetraethylorthosilicate(Si(OC₂H₅)₄ or “TEOS”) chemistry. Sacrificial dielectric layer 102 maybe deposited to a thickness of about 3 μm in an embodiment, althoughdielectric layer 102 may be thicker or thinner in further embodiments.In embodiments wherein dielectric layer 102 is fusion bonded orotherwise joined to a separate transducer wafer, as described below inconjunction with FIG. 9, the upper surface of sacrificial dielectriclayer 102 may be planarized utilizing, for example, a CMP process tofacilitate the below-described bonding process.

As previously indicated, embodiments of the fabrication method describedherein are advantageously carried-out as modified HARMEMS processeswherein at least the MEMS substrate and the transducer layer areinitially produced from discrete wafers or separate workpieces. In thisregard, and as indicated in FIG. 9, a transducer workpiece or wafer maynext be bonded to the substrate workpiece or wafer in which MEMSsubstrate 82 and the layers formed thereover are included. As only theportions of the substrate wafer and the transducer wafer ultimatelyincluded in the completed MEMS device 80 are shown in FIG. 9 (that is,the portions of the substrate wafer and transducer wafer not removedduring singulation), these portions are referred to hereafter andidentified in FIG. 9 as “substrate wafer portion 104” and “transducerwafer portion 106,” respectively. Transducer wafer portion 106 includesan electrically-conductive transducer layer 108. In a preferredembodiment, transducer wafer portion 106 is an integral part of a largerbulk silicon wafer, and electrically-conductive transducer layer 108 iscomposed of single crystal silicon.

With continued reference to FIG. 9, fusion bonding is preferablyemployed to join substrate wafer portion 104 and transducer waferportion 106 and, more generally, the larger substrate wafer to thelarger transducer wafer. In the illustrated example, the transducerwafer and, thus, the illustrated transducer wafer portion 106 includesonly the bulk semiconductor material or electrically-conductive materialmaking-up an electrically-conductive transducer layer 108. In suchinstances when no additional intervening layers have been formed overthe substrate wafer, electrically-conductive transducer layer 108 may bejoined directly to sacrificial dielectric layer 102 by fusion bonding oranother bonding technique. However, in further embodiments, thetransducer wafer may have undergone additional processing at thisjuncture in the fabrication process, and transducer wafer portion 106may include one or more intervening layers, such as an oxide layerdeposited on or grown over at least the underside of the transducerwafer. If desired, annealing may be performed after substrate bonding byexposing partially-fabricated MEMS device 80 to elevated temperaturesexceeding, for example, about 1000° C. for a predetermined period oftime (e.g., about 1 to 3 hours) to enhance bond strength.

At least one opening or blind tunnel is next formed throughelectrically-conductive transducer layer 108 and underlying sacrificialdielectric layer 102. FIG. 10 illustrates partially-fabricated MEMSdevice 80 after the formation of one such opening 110, which extendsthrough layers 108 and 102 to expose a region of underlying interconnectlayer 96 and, specifically, the interconnect line 100 in ohmic contactwith filled via 94. In the illustrated example, opening 110 aligns withor overlaps with filled via 94, as taken along an axis orthogonal to theupper surface of substrate 82 (the Z-axis in FIG. 17); however, thisneed not always be the case. Opening 110 may be formed utilizing a DRIEprocess utilizing etch chemistries selective to the materials from whichtransducer layer 108 and the underlying dielectric layer 102 are formed,although various other material removal processes can also be employedsuitable for forming high aspect ratio features. As indicated in FIG.10, opening 110 may be formed to have a width less than the width of theunderlying via 94; e.g., in one embodiment, opening 110 is formed tohave a width between about 1 and about 10 μm.

After formation of opening 110 (FIG. 10), an electrically-conductivematerial is deposited over the upper surface of transducer layer 108 andinto opening 110 to yield an electrically-conductive overburden layer112 overlying transducer layer 108 and an electrically-conductive bodyor plug 114 integrally formed therewith (shown in FIG. 11).Electrically-conductive plug 114 extends through transducer layer 108,through sacrificial dielectric layer 102, and to interconnect line 100formed in interconnect layer 96. Electrically-conductive plug 114 thusohmically contacts both the interior surfaces of transducer layer 108defining the now-filled opening 110 (again, identified in FIG. 10) andthe upper surface of interconnect line 100. In so doing,electrically-conductive plug 114 cooperates or combines withinterconnect line 100 to provide an electrically-conductive path fromtransducer layer 108 to via 94. It should be noted that, whileelectrically-conductive plug 114 vertically aligns with filled via 94 inthe illustrated example (again, as taken along an axis orthogonal to theupper surface of MEMS substrate 82 or along the Z-axis in FIG. 17), thisis not necessary in all embodiments; instead, in other embodiments,electrically-conductive plug 114 may be vertically offset with respectto filled via 94, and interconnect line 100 may extend in one or morevarious direction within the plane of interconnect layer 96 (along theX- and/or Y-axes in FIG. 17) to provide the desired electricalinterconnection between plug 114 and buried via 94. In oneimplementation, electrically-conductive overburden layer 112 andelectrically-conductive plug 114 are collectively formed via thedeposition of polycrystalline silicon utilizing, for example, a CVD orPVD process. In another embodiment, overburden layer 112 and plug 114are formed by deposition of a metal. After deposition of theelectrically-conductive material over partially-fabricated MEMS device80, electrically-conductive overburden layer 112 may be removed, in partor in its entirety, utilizing a CMP process or other material removalprocess. The structure shown in FIG. 12 results.

Advancing to FIG. 13, electrically-conductive transducer layer 108 maynow be patterned to define a primary transducer structure 118 includinga number of anchor regions 120, which are mechanically joined to one ormore proof mass structures (hidden from view in FIG. 13) by way ofspring members 122. In the illustrated example, transducer layer 108 isalso patterned to include a peripheral rim region 124, which extendsaround and circumferentially encloses the primary transducer structure118. Movement of the proof mass and spring members 122 is, however,prevented or impeded by underlying sacrificial dielectric layer 102.Sacrificial dielectric layer 102 is now removed, in whole or in part, tomechanically release the proof mass structure and spring members 122.For example, sacrificial dielectric layer 102 may be removed through thetransducer layer openings utilizing an etchant having a chemistryselective to the parent material of sacrificial dielectric layer 102;e.g., in embodiments wherein sacrificial dielectric layer 102 iscomposed of a silicon oxide, a wet etch or vapor-based etch utilizing afluoride-based etch chemistry may be employed. The resultant structureis shown in FIG. 14 wherein void area 126 has been produced via theremoval of sacrificial dielectric layer 102 thereby mechanicallyreleasing spring members 122 and the non-illustrated proof massstructure. A peripheral portion 128 of sacrificial dielectric layer 102has, however, intentionally been left intact underlying peripheral rimregion 124 of transducer layer 108 to facilitate hermetic sealing ofMEMS device 80. Removal of the central portion of sacrificial dielectriclayer 102 in this manner exposes electrically-conductive plug 114, whichserves as an electrically-conductive base member or neck region in ohmiccontact with a region of primary transducer structure 118 (e.g., anchorregion 120 in the illustrated example). This region of primarytransducer structure 118 is thus electrically coupled to via 94 throughplug 114 and the underlying portion of interconnect layer 96 (e.g.,interconnect line 100 in the illustrated example).

FIG. 15 illustrates partially-fabricated MEMS device 80 after attachmentof a cover piece (referred to herein as “MEMS cap 130”). As shown inFIG. 15, MEMS cap 130 includes a lower circumferential wall or rimportion 132, which is sealingly joined to outer peripheral region 124 oftransducer layer 108; e.g., in an embodiment, rim portion 132 of MEMScap 130 may be bonded to peripheral region 124 of transducer layer 108utilizing a dielectric adhesive material 136. As taken around theperimeter of MEMS device 80, rim portion 132 of MEMS cap 130 andperipheral region 124 of transducer layer 108 are continuous or unbrokenstructures. Thus, rim portion 132 of MEMS cap 130 and peripheral portion134 of transducer layer 108 cooperate to hermetically enclose theinterior region of MEMS device 80, which houses primary transducerstructure 118, to prevent environmental contamination thereof. An innerdepression or cavity 138 may be formed in the underside of MEMS cap 130to accommodate deflection of the proof mass of primary transducerstructure 118 along the Z-axis (upward in the illustrated orientation).MEMS cap 130 may be produced from a discrete cap wafer, which is bondedto the MEMS wafer and subsequently singulated to define cap 130 alongwith a number of similar caps bonded to neighboring MEMS devicesproduced in parallel with MEMS device 80. This example notwithstanding,MEMS device 80 need not include a cover piece or cap in all embodiments.

After attachment of MEMS cap 130 (FIG. 14), MEMS substrate 82 is thinnedto reveal via 94 and the other non-illustrated vias through a bottomsurface thereof and thereby produce a number of TSVs extending entirelythrough substrate 62. FIG. 16 illustrates partially-fabricated MEMSdevice 80 after thinning of MEMS substrate 82 and exposure of buried via94 through a newly-formed bottom surface 140 thereof. The lower regionsof TSV isolation liners 91 are also removed during substrate thinning toultimately expose the lower region of via 94 and the othernon-illustrated vias. During the thinning process, sufficient materialmay be removed from the backside of MEMS substrate 82 to impartsubstrate 82 with a predetermined final thickness of, for example, about100 to about 300 μm. While any process or combination of processessuitable for removal material from the backside of MEMS substrate 82 toreveal the TSVs therethrough can be employed, grinding is preferablyutilized to thin MEMS substrate 82. In alternative embodiments,substrate 82 may be ground or otherwise thinned prior to attachment ofMEMS cap 130, if included within MEMS device 80; however, it ispreferred that MEMS substrate 82 is thinned after MEMS cap attachment tostructurally reinforce the partially-fabricated MEMS device during thethinning process. As vias 94 now extend fully through MEMS substrate 82,vias 94 are referred to as “TSVs 94” hereafter.

Continuing with the exemplary MEMS fabrication process, one or moreelectrically-conductive contacts (generically referred to herein as“backside conductors”) are next formed over the backside 140 of MEMSsubstrate 82. With reference to FIG. 17, a backside dielectric layer 116may first be formed over bottom surface 140 of thinned MEMS substrate 82utilizing, for example, CVD, PVD, or a spin-on deposition process.Backside dielectric layer 142 may then be lithographically patterned toexpose vias 94 therethrough. An electrically-conductive layer 144 (e.g.,copper or another metal) may then be deposited over dielectric layer 142and patterned to form a number of bond pads 144(a). Bond pads 144(a) maybe in direct ohmic contact with TSVs 94 and, consequently, interconnectlines may be unnecessary in certain embodiments. However, bond pads144(a) will often not align or be vertically offset with respect to TSVs94, as taken along the Z-axis in FIG. 17. Consequently, additionalbackside conductors may also be formed to interconnect bond pads 144(a)with their associated TSVs 94. For example, as shown in FIG. 17,electrically-conductive layer 144 may further be patterned to include atleast one interconnect lines 144(b), which extends over the backside ofMEMS substrate 82 to electrically connect the illustrated via 94 withone of the illustrated bond pads 144(a). If desired, a non-illustratedpassivation dielectric layer can be formed, for example, utilizing CVD,PVD, or a spin-on method and patterned to protect the metal layers fromscratching and other physical damage. Conventional manufacturing stepsmay then be carried-out to complete fabrication and packaging of MEMSdevice 80 including, for example, electrical interconnection of MEMSdevice 80 with neighboring integrated circuit (IC), which may beencapsulated with MEMS device 80 in a common package. As bond pads144(a) are located at an elevation substantially equivalent to theelevation of the bottom most surface of MEMS device 80, MEMS device 80is well-suited for interconnection to, for example, a printed circuitboard utilizing a CSP packaging technique. Such packaging approachesinclude both 2D and 3D (stacked) packaging approaches, such as Flip Chip(FC) Package-on-Package (PoP), Thru Mold Via (TMV) FC PoP, and RCP PoPpackaging approaches.

It should thus be appreciated that backside bond pads 144(a) are formedover the bottom or lower surface 140 of MEMS substrate 82 in the case ofthe exemplary MEMS device 80 (FIG. 17) produced as a result of theabove-described fabrication process. As a result, MEMS device 80 is notrequired to include a laterally-projecting bond shelf to support bondpads 144(a). MEMS device 80 may thus lack any such bond shelf in someembodiments; and, assuming device 80 to have a generally rectangularplanform shape, the four lateral sides of MEMS cap 130 may besubstantially vertically flush with the four lateral sides of transducerlayer 108, substrate 82, and the other layers of MEMS device 80, asshown in FIG. 17. Relative to a comparable MEMS device including alaterally-projecting bond shelf, such as bond shelf 44 of MEMS device 20shown in FIG. 1, the footprint of MEMS die is consequently reduced by asignificant margin. More specifically, a die size reduction of about 15%to about 30% can be achieved in certain implementations. Through thisreduction in die size, cost savings are also realized, which may renderthe above-described fabrication method cost neutral or less costly toperformed as compared to conventional MEMS fabrication methods.Furthermore, by relocating the MEMS bond pads to the underside of theMEMS substrate 82, fewer spatial constraints are placed the positioningor arrangement of the bond pad array as compared to conventionalbond-shelf architectures. As a still further advantage, MEMS device 80is amenable to RCP packaging and CSP packaging techniques as bond pads144(a) of MEMS device 80 are disposed on the lowermost surface of device80. Finally, as the need for metal routing or other interconnectfeatures on the MEMS cap is eliminated, embodiments of MEMS device 80can be produced utilizing dumb caps lacking interconnect features tofurther simplify processing and reduce manufacturing costs. Theforegoing notwithstanding, embodiments of MEMS device 80 can also beproduced pursuant to the above-described fabrication method includingone or more TSVs in combination with one or more bond pad shelves and/ora “smart” MEMS cap including metal routing.

The above-described MEMS manufacturing technique can also be utilized toform photolithographical alignment features on the backside of theground or thinned MEMS substrate in conjunction with formation of theTSVs. This may be more fully appreciated by referring to FIG. 18, whichillustrates substrate wafer portion 104 prior to joinder to transducerwafer portion 106. FIG. 18 is identical to FIG. 4 with the exceptionthat a larger portion of substrate wafer portion 104 is shown, asencompassed by dashed box 150 shown in the leftmost portion of FIG. 17.Here, MEMS device 80 has been fabricated to further include an embeddedalignment feature 152, which extends into MEMS substrate 82 to a depthsubstantially equivalent to the illustrated via 94. Alignment feature152 can be fabricated in parallel with via 94 utilizing theabove-described process by further patterning substrate wafer portion104 to include one or more additional alignment feature openingsextending into, but not through MEMS substrate 82. Such openings maythen be filled in conjunction with filling of the via openings, asdescribed above in conjunction with FIG. 4. During the above-describedback-grinding or thinning process, and as illustrated in FIG. 19,alignment features 152 are exposed along with vias 94 to provideconvenient points of reference with which to align the lithographicaltools utilized for patterning of layers 142 and 144. When viewed from atop-down or planform perspective, the particular design or shape ofalignment features 152 will vary depending upon the requirements of thetool. Common alignment structure designs include circular shapes,annular shapes, frames, and rectangular shapes, to list but a fewexamples. So as to not unnecessarily increase the footprint of thefinished MEMS device, alignment features 152 are preferable formedwithin the dicing streets or kerf areas removed from MEMS device 80during dicing, as indicated in FIGS. 18 and 18 by dashed box 150.

There has thus been provided methods of fabricating an exemplary MEMSdevice including one or more TSVs, which enable the elimination of thebond pad shelf (at least in some embodiments) to bring about favorablereductions in die size and manufacturing costs. In preferredembodiments, the MEMS fabrication method described above are implementedas a modified HARMEMS process flow wherein separate substrate andtransducer workpieces or wafers are bonded together during processing,possibly in conjunction with a separate MEMS cap wafer. Embodiments ofthe MEMS fabrication method facilitate the formation ofphotolithographical alignment features on the backside of the ground orthinned MEMS substrate in conjunction with formation of the TSVs. Whileat least one exemplary embodiment of the MEMS fabrication method hasbeen provided above, numerous variations of this method are possible.For example, in one possible variation wherein the MEMS device does notinclude Z-axis electrodes defined by patterning of an interconnectlayer, the interconnect layer (e.g., interconnect layer 96 shown inFIGS. 7-19) can potentially be eliminated with the desiredinterconnections provided solely utilizing backside routing.

In one embodiment, the above-described MEMS device fabrication methodincludes the steps of forming at least one via opening extending into asubstrate wafer, depositing a body of electrically-conductive materialover the substrate wafer and into the via opening to produce a via, andbonding the substrate wafer to a transducer wafer having anelectrically-conductive transducer layer. The transducer wafer mayinclude only the electrically-conductive transducer layer or may one ormore additional layers in addition to the transducer layer, such as adielectric layer (e.g., an oxide) formed over the transducer layer(e.g., silicon). An electrical connection is formed between the via andthe electrically-conductive transducer layer during bonding orsubsequent thereto. The electrical connection can be formed duringbonding of the substrate wafer and the transducer wafer or after bondingby, for example, producing an electrically-conductive plug similar toplug 114 described above in conjunction with FIGS. 11-19. The substratewafer is thinned to reveal the via through a bottom surface of thesubstrate wafer, and a backside conductor is produced over a bottomsurface of the substrate wafer electrically coupled to the via. Thebackside conductor may be any electrically-conductive member orstructure formed at least partially on or over the backside of thesubstrate, such as an interconnect line (e.g., a metal trace) or abackside bond pad.

In a further embodiment, the above-described MEMS device fabricationmethod includes the steps of bonding a transducer wafer, which includesan unpatterned transducer layer, to a substrate wafer comprising atleast one via extending into a substrate and a sacrificial dielectriclayer formed over an upper surface of the substrate, the transducerwafer comprising an unpatterned transducer layer. Anelectrically-conductive plug is formed to electrically couple theunpatterned transducer layer to the via after bonding the transducerwafer to the substrate wafer. The unpatterned transducer layer is thenpatterned after bonding the transducer wafer to the substrate wafer todefine a primary transducer structure. At least a portion of thesacrificial dielectric layer is removed through at least one openingformed in the transducer layer during patterning thereof to release theprimary transducer structure. The backside of the substrate is ground toremove a predetermined thickness therefrom reveal the via through abottom surface of the substrate wafer. A backside conductor, such as aninterconnect line or backside bond pad, is produced over a bottomsurface of the substrate wafer electrically coupled to the via.

Embodiments of a MEMS device have also been provided. In one embodiment,the MEMS device includes a substrate having an top surface and a bottomsurface. A backside conductor is formed over the bottom surface of thesubstrate, and a filled Through-Substrate-Via (TSV) extending throughthe substrate and contacting the backside conductor. A dielectric layeris disposed over the top surface of the substrate. A patternedtransducer layer is, in turn, disposed over the dielectric layer andpatterned to include a primary transducer structure. A patternedinterconnect layer is located between the dielectric layer and thepatterned transducer layer. The patterned interconnect layer isseparated from the primary transducer structure by an air gap or void(e.g., 126 shown in FIGS. 14-17 and 19) and patterned to include aninterconnect line in ohmic contact with the filled TSV. Anelectrically-conductive plug (e.g., plug 114 shown in FIGS. 11-19)extends from the primary transducer structure, through the air gap orvoid, and the interconnect line such that an electrically-conductivepath is formed from the primary transducer structure, through theelectrically-conductive plug, through the interconnect line, through thefilled TSV, and to the backside conductor.

While at least one exemplary embodiment has been presented in theforegoing Detailed Description, it should be appreciated that a vastnumber of variations exist. It should also be appreciated that theexemplary embodiment or exemplary embodiments are only examples, and arenot intended to limit the scope, applicability, or configuration of theinvention in any way. Rather, the foregoing Detailed Description willprovide those skilled in the art with a convenient road map forimplementing an exemplary embodiment of the invention. It beingunderstood that various changes may be made in the function andarrangement of elements described in an exemplary embodiment withoutdeparting from the scope of the invention, as set-forth in the appendedclaims.

What is claimed is:
 1. A Microelectromechanical Systems (“MEMS”) device,comprising: a substrate having a top surface and a bottom surface; abackside conductor formed over the bottom surface of the substrate; afilled Through-Substrate-Via (TSV) extending through the substrate andcontacting the backside conductor; a dielectric layer disposed over thetop surface of the substrate; a patterned transducer layer disposed overthe dielectric layer and patterned to include a primary transducerstructure; a patterned interconnect layer located between the dielectriclayer and the patterned transducer layer, the patterned interconnectlayer separated from the primary transducer structure by an air gap andpatterned to include an interconnect line in ohmic contact with thefilled TSV; and an electrically-conductive plug extending from theprimary transducer structure, through the air gap, and to theinterconnect line such that an electrically-conductive path is providedfrom the primary transducer structure, through theelectrically-conductive plug, through the interconnect line, through thefilled TSV, and to the backside conductor; wherein theelectrically-conductive plug extends into the primary transducerstructure.
 2. The MEMS device of claim 1 further comprising a peripheralportion of a sacrificial layer bonding the patterned interconnect layerto the patterned transducer layer.
 3. The MEMS device of claim 1 whereinthe electrically-conductive plug is vertically aligned with the filledTSV, as taken along an axis orthogonal to the top surface of thesubstrate.
 4. The MEMS device of claim 1 further comprising an openingin which the electrically-conductive plug is formed, the openingextending through at least the patterned transducer layer and having awidth less than a width of the filled TSV.
 5. The MEMS device of claim 1wherein the primary transducer structure comprises an anchor region, andwherein the electrically-conductive plug comprises a neck region joinedto the anchor region.
 6. The MEMS device of claim 1 further comprising:a substrate wafer portion including the substrate, the filled TSV, thedielectric layer, and the patterned transducer layer; and a transducerwafer portion including the patterned transducer layer.
 7. The MEMSdevice of claim 6 wherein the substrate wafer portion is fusion bondedto the transducer wafer portion.
 8. The MEMS device of claim 6 furthercomprising a MEMS cap bonded to the transducer wafer portion oppositethe substrate wafer portion, the MEMS cap lacking interconnect features.9. The MEMS device of claim 1 further comprising: a backside dielectriclayer formed on the bottom surface of the substrate; and a backside bondpad formed on the backside dielectric layer and vertically offsetrelative to the filled TSV; wherein the backside conductor comprises aninterconnect line electrically coupling the backside bond pad to thefilled TSV.
 10. A Microelectromechanical Systems (“MEMS”) device,comprising: a substrate wafer portion including a substrate having a topsurface and a bottom surface; a transducer wafer portion bonded to thesubstrate wafer portion, the transducer wafer portion comprising: apatterned transducer layer; and a primary transducer structure formed inthe patterned transducer layer; a backside conductor disposed over thebottom surface of the substrate; an electrically-conductive plug formedthrough the primary transducer structure and extending toward thesubstrate; and a filled Through-Substrate-Via (TSV) extending from thetop surface to the bottom surface of the substrate, the primarytransducer structure electrically coupled to the backside conductorthrough the electrically-conductive plug and the filled TSV.
 11. TheMEMS device of claim 10 wherein the substrate wafer portion furthercomprises a partially-removed sacrificial layer to which the patternedtransducer layer is bonded.
 12. The MEMS device of claim 11 wherein acentral portion of the partially-removed sacrificial layer is removedsuch that the electrically-conductive plug is exposed within the MEMSdevice.
 13. A Microelectromechanical Systems (“MEMS”) device,comprising: a substrate having a top surface and a bottom surface; abackside conductor formed over the bottom surface of the substrate; afilled Through-Substrate-Via (TSV) extending through the substrate andcontacting the backside conductor; a dielectric layer disposed over thetop surface of the substrate; a patterned transducer layer disposed overthe dielectric layer and patterned to include a primary transducerstructure; a patterned interconnect layer located between the dielectriclayer and the patterned transducer layer, the patterned interconnectlayer separated from the primary transducer structure by an air gap andpatterned to include an interconnect line in ohmic contact with thefilled TSV; and an electrically-conductive plug extending from theprimary transducer structure, through the air gap, and to theinterconnect line such that an electrically-conductive path is providedfrom the primary transducer structure, through theelectrically-conductive plug, through the interconnect line, through thefilled TSV, and to the backside conductor; wherein theelectrically-conductive plug and the filled TSV compriseseparately-formed structures having different widths.
 14. The MES deviceof claim 13 further comprising a peripheral portion of a sacrificiallayer bonding the patterned interconnect layer to the patternedtransducer layer.
 15. The MEMS device of claim 13 wherein theelectrically-conductive plug is vertically aligned with the filled TSV,as taken along an axis orthogonal to the top surface of the substrate.16. The MEMS device of claim 13 further comprising an opening in whichthe electrically-conductive plug is formed, the opening extendingthrough at least the patterned transducer layer and having a width lessthan a width of the filled TSV.
 17. The MEMS device of claim 13 whereinthe primary transducer structure comprises an anchor region, and whereinthe electrically-conductive plug comprises a neck region joined to theanchor region.
 18. The MEMS device of claim 13 further comprising: asubstrate wafer portion including the substrate, the filled TSV, thedielectric layer, and the patterned transducer layer; and a transducerwafer portion including the patterned transducer layer.
 19. The MEMSdevice of claim 18 wherein the substrate wafer portion is fusion bondedto the transducer wafer portion.
 20. The MEMS device of claim 18 furthercomprising a MEMS cap bonded to the transducer wafer portion oppositethe substrate wafer portion, the MEMS cap lacking interconnect features.